Density measurement of a thin-film by the pressure-of-flotation method

Author

Waseda, Atsushi ; Fujii, Kenichi ; Taketoshi, Naoyuki

Author_Institution

Nat. Metrol. Inst. of Japan, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan

Volume

54

Issue

2

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

882

Lastpage

885

Abstract

The pressure-of-flotation apparatus for density comparison has been improved in temperature control. A new method for density and thickness measurements of a thin-film is proposed by a pressure-of-flotation method (PFM). The density and thickness of a molybdenum thin-film prepared on a silicon substrate by a sputtering technique are evaluated by measuring the density and mass differences of a silicon substrate with and without the thin-film. The estimated density of the molybdenum film is (7890±300) kg/m³, which is smaller than that of bulk molybdenum. The average thickness of the thin-film is calculated to be (12.08 ± 0.49) nm. Details on the density and thickness measurement of a thin-film and the results of the measurement are presented.

Keywords

constants; density; density measurement; molybdenum; silicon; thickness measurement; thin films; Avogadro constant; density measurement; mass differences; molybdenum; pressure-of-flotation apparatus; silicon crystal; silicon substrate; sputtering technique; temperature control; thickness measurements; thin film; Crystals; Density measurement; Semiconductor thin films; Silicon; Sputtering; Stability; Substrates; Temperature control; Thickness measurement; Transistors; Avogadro constant; density; pressure-of-flotation method (PFM); silicon crystal; thickness; thin-film;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2005.843523

Filename

1408311