• DocumentCode
    748599
  • Title

    Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides

  • Author

    Porti, M. ; Nafria, M. ; Aymerich, X. ; Cester, A. ; Paccagnella, A. ; Cimino, S.

  • Author_Institution
    Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
  • Volume
    52
  • Issue
    5
  • fYear
    2005
  • Firstpage
    1457
  • Lastpage
    1461
  • Abstract
    In this work, the electrical conduction of irradiated thin SiO2 gate oxides of MOS structures has been analyzed at a nanometer scale with a Conductive Atomic Force Microscope (C-AFM). The results have been compared to those obtained on fresh and electrically stressed oxides, demonstrating the capability of the technique to evaluate the electrical damage induced during irradiation.
  • Keywords
    MIS structures; atomic force microscopy; electric breakdown; electrical conductivity; nanostructured materials; radiation effects; semiconductor device reliability; silicon compounds; MOS structures; SiO2; conductive atomic force microscope; electrical conduction; electrical damage; electrically stressed oxides; irradiated thin SiO2 gate oxides; nanometer scale; semiconductor device reliability; Atomic force microscopy; Atomic measurements; Degradation; Dielectric breakdown; Dielectric devices; MOS devices; Scanning electron microscopy; Spatial resolution; Testing; Tunneling; Atomic force microscopy; MOS devices; dielectric breakdown; dielectric radiation effects; gate dielectric; semiconductor device reliability;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.855647
  • Filename
    1546443
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=748599