Slab-coupled 1.3-μm semiconductor laser with single-spatial large-diameter mode

Author

Walpole, J.N. ; Donnelly, J.P. ; Taylor, P.J. ; Missaggia, L.J. ; Harris, C.T. ; Bailey, R.J. ; Napoleone, A. ; Groves, S.H. ; Chinn, S.R. ; Huang, R. ; Plant, J.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

14

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

756

Lastpage

758

Abstract

A high brightness semiconductor diode laser structure, which utilizes a slab-coupled optical waveguide region to achieve several potentially important advances in performance, is proposed and experimentally demonstrated using a simple rib waveguide in an InGaAsP-InP quantum-well structure operating at 1.3-μm wavelength. These lasers operate in a large low-aspect-ratio lowest-order spatial mode, which can be butt coupled to a single-mode fiber with high coupling efficiency.

Keywords

III-V semiconductors; brightness; gallium arsenide; indium compounds; laser modes; laser transitions; optical fibre couplers; quantum well lasers; rib waveguides; waveguide lasers; 1.3 micron; InGaAsP-InP; InGaAsP-InP quantum-well structure; butt coupled; high brightness semiconductor diode laser structure; high coupling efficiency; large low-aspect-ratio lowest-order spatial mode; simple rib waveguide; single-mode fiber; single-spatial large-diameter mode; slab-coupled 1.3-/spl mu/m semiconductor laser; slab-coupled optical waveguide region; Brightness; Fiber lasers; Laser modes; Optical coupling; Optical waveguides; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1003083

Filename

1003083