Quantitative prediction of semiconductor laser characteristics based on low intensity photoluminescence measurements

Author

Hader, J. ; Zakharian, A.R. ; Moloney, J.V. ; Nelson, T.R. ; Siskaninetz, W.J. ; Ehret, J.E. ; Hantke, K. ; Hofmann, M. ; Koch, S.W.

Author_Institution

Arizona Center for Math. Sci., Arizona Univ., Tucson, AZ, USA

Volume

14

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

762

Lastpage

764

Abstract

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photoluminescence spectra is outlined and demonstrated. We describe a comprehensive model that allows us to determine properties of the running device like gain spectra, peak gain wavelengths, bandwidths or differential gains, as well as inhomogeneous broadening and actual carrier densities of PL-signals. This information can then be used to compute characteristics like the temperature dependence of the gain, threshold densities, optical field distributions or near-field and far-field outputs.

Keywords

amplification; laser theory; laser variables measurement; photoluminescence; quantum well lasers; semiconductor lasers; spectral line broadening; MQW structure; bandwidths; carrier densities; comprehensive model; differential gains; far-field outputs; gain spectra; inhomogeneous broadening; low intensity photoluminescence measurements; near-field outputs; operating characteristics; optical field distributions; peak gain wavelengths; semiconductor lasers; threshold densities; Absorption; Charge carrier density; Laboratories; Laser excitation; Optical pumping; Photoluminescence; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2002.1003085

Filename

1003085