• DocumentCode
    748719
  • Title

    Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs

  • Author

    Mérelle, Thomas ; Saigné, F. ; Sagnes, B. ; Gasiot, G. ; Roche, Ph. ; Carrière, T. ; Palau, M.-C. ; Wrobel, F. ; Palau, J.-M.

  • Author_Institution
    Central R&D, STMicroelectronics, Crolles, France
  • Volume
    52
  • Issue
    5
  • fYear
    2005
  • Firstpage
    1538
  • Lastpage
    1544
  • Abstract
    This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
  • Keywords
    Monte Carlo methods; SRAM chips; neutron effects; Los Alamos neutron facility; Monte-Carlo simulations; SEU; SRAM; diffusion; neutron-induced multiple bit upsets; single event upsets; Alpha particles; Atmospheric modeling; CMOS technology; Computational modeling; Error correction; Error correction codes; Neutrons; Random access memory; Research and development; Single event upset; Bulk; Monte-Carlo; SEU; SRAM; diffusion; multiple bit upsets (MBU); neutron;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.855823
  • Filename
    1546455
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=748719