Radiation test results on first silicon in the design against radiation effects (DARE) library

Author

Redant, Steven ; Marec, R. ; Baguena, L. ; Liegeon, E. ; Soucarre, J. ; Van Thielen, B. ; Beeckman, G. ; Ribeiro, P. ; Fernandez-Leon, A. ; Glass, B.

Author_Institution

IMEC, Leuven, Belgium

Volume

52

Issue

5

fYear

2005

Firstpage

1550

Lastpage

1554

Abstract

This paper describes the first use of a Radiation Hardened by Design (DARE: Design Against Radiation Effects) library for the UMC 180 nm CMOS six-layer metal technology in a telecom application specific integrated circuit (ASIC). An innovative adapted "design for test" approach has been used to allow the evaluation of the behavior of this ASIC under radiation. Radiation tests results and conclusions on future use of this library are also presented.

Keywords

CMOS integrated circuits; application specific integrated circuits; radiation hardening (electronics); silicon; ASIC; CMOS; DARE; design against radiation effects; integrated circuit radiation effects; radiation hardening; silicon; six-layer metal technology; telecom application specific integrated circuit; Application specific integrated circuits; CMOS technology; Circuit testing; Glass; Integrated circuit technology; Libraries; Radiation effects; Radiation hardening; Silicon; Space technology; Design for testability; integrated circuit radiation effects; radiation hardening;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.855818

Filename

1546457