DocumentCode
748876
Title
1.54 μm singlemode InP-based Q-dash lasers
Author
Bach, L. ; Kaiser, W. ; Schwertberger, R. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution
Dept. of Tech. Phys., Univ. Wurzburg, Germany
Volume
39
Issue
13
fYear
2003
fDate
6/26/2003 12:00:00 AM
Firstpage
985
Lastpage
987
Abstract
Singlemode lasers based on AlGaInAs/InAs/InP quantum-dash layers were for the first time fabricated with emission wavelengths in the 1.55 μm telecommunication band. A low thermal shift of the gain maximum in quantum-dash structures allows a wide operation temperature range for distributed feedback lasers.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; optical communication equipment; quantum dot lasers; 1.54 micron; AlGaInAs-InAs-InP; DFB lasers; InP-based lasers; Q-dash lasers; distributed feedback lasers; emission wavelengths; quantum-dash structures; singlemode lasers; telecommunication band; wide operation temperature range;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030640
Filename
1214795
Link To Document