DocumentCode
749072
Title
Anomalous temperature-dependent characteristics of silicon diffused resistors
Author
Chuang, Hung-Ming ; Tsai, Sheng-Fu ; Thei, Kong-Beng ; Liu, Wen-Chau
Author_Institution
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
Volume
39
Issue
13
fYear
2003
fDate
6/26/2003 12:00:00 AM
Firstpage
1015
Lastpage
1016
Abstract
The temperature-dependent characteristics of silicon diffused resistors are demonstrated and studied. Based on the presence of a silicide/silicon junction, the device size plays an important role on diffused resistor behaviours. From experimental and theoretical analysis, some important parameters, e.g. the interface resistance (Rinterface), sheet resistance (Rbulk), deviations of resistor length (ΔL) and width (ΔW ) are obtained. Also, anomalous phenomena of temperature coefficient of resistance (TCR) are found.
Keywords
CMOS integrated circuits; electrostatic discharge; isolation technology; resistors; CMOS; ESD protection circuits; anomalous temperature-dependent characteristics; device size; diffused resistors; interface resistance; resistor length; resistor width; sheet resistance; temperature coefficient of resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030659
Filename
1214813
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