Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Source/Drain Regions Doped by Implanted Arsenic

Author

Chen, Rongsheng ; Zhou, Wei ; Zhang, Meng ; Wong, Man ; Kwok, Hoi Sing

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

34

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

60

Lastpage

62

Abstract

Self-aligned top-gate amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with source/drain (S/D) regions doped by implanted arsenic are developed in this letter. The resulting a-IGZO TFTs exhibit much better thermal stability than those with S/D regions doped by hydrogen or argon plasma. They also show good electrical performance, including field-effect mobility of 12 cm²/V·s, threshold voltage of 3.5 V, subthreshold swing of 0.5 V/dec, and on/off current ratio of 9 ×10⁷.

Keywords

field effect transistors; gallium compounds; hydrogen; indium compounds; semiconductor doping; thermal stability; thin film transistors; zinc compounds; InGaZnO; argon plasma; doping; electrical performance; field-effect mobility; hydrogen; implanted arsenic; self-aligned indium-gallium-zinc oxide thin-film transistor; source-drain region; thermal stability; voltage 3.5 V; Argon; Hydrogen; Logic gates; Plasmas; Thermal stability; Thin film transistors; Amorphous indium–gallium–zinc oxide (a-IGZO); arsenic; self-aligned; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2223192

Filename

6361261