Title :
Aluminium free InGaAs/GaAs/InGaAsP/InGaP GRINSCH SL-SQW lasers at 0.98 mu m
Author :
Ohkubo, Masataka ; Ijichi, T. ; Iketani, A. ; Kikuta, T.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
6/4/1992 12:00:00 AM
Abstract :
Using InGaAsP lattice matched to GaAs, InGaAs/GaAs/InGaAsP/InGaP 0.98 mu m GRINSCH SL-SQW lasers were fabricated for the first time. A high characteristic temperature of 215 K was measured at 10-70 degrees C. A CW light output power of over 300 mW was achieved on 3 mu m-wide ridge waveguide lasers with current-blocked regions near cavity facets.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; 0.98 micron; 10 to 70 degC; 215 K; 3 micron; CW light output power; GRINSCH SL-SQW lasers; III-V semiconductors; InGaAs-GaAs-InGaAsP-InGaP; cavity facets; characteristic temperature; current-blocked regions; ridge waveguide lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920725
