Title :
InGaN/GaN tunnel-injection blue light-emitting diodes
Author :
Wen, T.C. ; Chang, S.J. ; Wu, L.W. ; Su, Y.K. ; Lai, W.C. ; Kuo, C.H. ; Chen, C.H. ; Sheu, J.K. ; Chen, J.F.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/2002 12:00:00 AM
Abstract :
A charge asymmetric resonance tunneling (CART) structure was applied to nitride-based blue light emitting diodes (LEDs) to enhance their output efficiency. It was found that with a 20-nm-thick In0.18Ga0.82N electron emitter layer, we could increase the LED output intensity from 28.3 minicandela (mcd) to 43.2 mcd (i.e., a 53% increase). However, a further increase in electron emitter layer thickness will reduce the intensity due to relaxation. It was also found that we could decrease the 20 mA forward voltage from 4.16 V to 3.58 V with a proper electron emitter layer
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; quantum well devices; resonant tunnelling devices; wide band gap semiconductors; 4.16 to 3.58 V; InGaN-GaN; MQW; PL spectra; charge asymmetric resonance tunneling; emitter layer thickness; nitride-based blue LED; output efficiency; output intensity; tunnel-injection LED; Carrier confinement; Electron emission; Electron guns; Electron optics; Gallium nitride; Light emitting diodes; Quantum well devices; Radioactive decay; Resonance; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.1003762
