AlGaN Photodetectors Prepared on Si Substrates

Author

Chiou, Y.Z. ; Lin, Y.C. ; Wang, C.K.

Author_Institution

Dept. of Electron. Eng., Southern Taiwan Univ., Tainan

Volume

28

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

264

Lastpage

266

Abstract

AlGaN ultraviolet (UV) metal-semiconductor-metal (MSM) photodetectors (PDs) grown on silicon substrates were fabricated and characterized. With 5-V applied bias, it was found that dark current density of Al_0.2Ga_0.7N PDs on silicon substrate was only 7.5times10^-9 A/cm². With an applied bias of 7 V, it was found that peak responsivities were 0.09 and 0.11 A/W while UV/visible rejection ratios (i.e., peak wavelength: 420 nm) were 324 and 278 for Al_0.2Ga_0.8N and Al_0.3Ga_0.7N MSM PDs, respectively. Moreover, the noise equivalent power of Al_0.2Ga_0.8N MSM PDs was estimated to be 3.5times10^-12 W

Keywords

III-V semiconductors; aluminium compounds; metal-semiconductor-metal structures; photodetectors; silicon; wide band gap semiconductors; 5 V; 7 V; AlGaN-Si; dark current density; noise equivalent power; ultraviolet metal-semiconductor-metal photodetectors; Aluminum gallium nitride; Epitaxial layers; Gallium nitride; Microelectronics; Photodetectors; Semiconductor device noise; Silicon carbide; Strain measurement; Substrates; Thermal conductivity; AlGaN; Si substrates; metal–semiconductor–metal (MSM); noise; photodetectors (PDs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.893224

Filename

4137629