• DocumentCode
    751612
  • Title

    Correction to "Revision of Tunneling Field-Effect Transistor in Standard CMOS Technologies"

  • Author

    Nirschl, Th ; Weis, M. ; Fulde, M. ; Schmitt-Landsiedel, Doris

  • Volume
    28
  • Issue
    4
  • fYear
    2007
  • fDate
    4/1/2007 12:00:00 AM
  • Firstpage
    315
  • Lastpage
    315
  • Abstract
    Previously published results by the authors, from 2004 to 2006, on the tunneling field-effect transistor (TFET) are revised in this correction. The devices that they had characterized as TFETs contain a conducting path in parallel to the intended tunneling junction. Therefore, the measured characteristics are similar to a MOSFET with a resistive source connection
  • Keywords
    CMOS integrated circuits; MOSFET; tunnelling; MOSFET; TFET; n-channel device; resistive source connection; standard CMOS technologies; tunneling barrier; tunneling field-effect transistor; tunneling junction; CMOS process; CMOS technology; Electrons; FETs; Implants; MOSFET circuits; Standards publication; Testing; Textile industry; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2007.893272
  • Filename
    4137644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=751612