Title :
W-band multiple-ring resonator by standard 0.18-μm CMOS technology
Author :
Hsu, S.S.H. ; Hong-Zhang Zhu
Author_Institution :
Electr. Eng. Dept., Nat. Tsinghua Univ., Hsinchu, Taiwan
Abstract :
A high-Q multiple-ring resonator fabricated by standard 0.18-μm CMOS process is presented. This design achieves a high quality factor at W-band without the need of any post-processing steps. Simulation results indicate that the four open-loop rings enhance the quality factor by 120% compared with the resonator with a single ring. The measured quality factors are 38 and 83 at /spl sim/75GHz under the loaded and unloaded conditions, respectively.
Keywords :
CMOS integrated circuits; Q-factor; microstrip resonators; millimetre wave integrated circuits; 0.18 micron; CMOS technology; W-band multiple-ring resonator; four open-loop rings; high-Q multiple-ring resonator; microstrip resonators; quality factor; Application specific integrated circuits; CMOS process; CMOS technology; Integrated circuit technology; Metal-insulator structures; Microstrip resonators; Optical ring resonators; Q factor; Space technology; Substrates; CMOS; W-band; microstrip line; resonator;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.860025
