Accurate Series-Resistance Extraction From Capacitor Using Time Domain Reflectometry

Author

Wang, Y. ; Cheung, K.P. ; Choi, R. ; Brown, G.A. ; Lee, B.H.

Author_Institution

Electr. & Comput. Eng., Rutgers Univ., New Brunswick, NJ

Volume

28

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

279

Lastpage

281

Abstract

For advanced CMOS technology, series resistance is an important source of error in capacitance-voltage (C-V) measurement. Independent accurate determination of series resistance is generally not possible. Recently, we introduced a new C-V measurement method using time domain reflectometry (TDR). Here, we show that the TDR method also allows series resistance to be determined independently and accurately

Keywords

capacitance measurement; capacitors; electric resistance measurement; integrated circuit measurement; leakage currents; time-domain reflectometry; voltage measurement; MOSFET; advanced CMOS technology; capacitance-voltage measurement; capacitor series-resistance extraction; time domain reflectometry; CMOS technology; Capacitance measurement; Capacitors; Circuit testing; Current measurement; Displacement measurement; Electrical resistance measurement; Leakage current; Reflectometry; Time measurement; Capacitance; MOSFET; leakage; series resistance; thin oxide; time domain reflectometry;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.891751

Filename

4137650