Title :
High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function Ir3Si Gate
Author :
Wu, C.H. ; Hung, B.F. ; Chin, Albert ; Wang, S.J. ; Wang, X.P. ; Li, M.-F. ; Zhu, C. ; Yen, F.Y. ; Hou, Y.T. ; Jin, Y. ; Tao, H.J. ; Chen, S.C. ; Liang, M.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fDate :
4/1/2007 12:00:00 AM
Abstract :
We report a novel 1000 degC stable HfLaON p-MOSFET with Ir3 Si gate. Low leakage current of 1.8times10-5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/Vmiddots are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degC rapid thermal annealing is fully compatible to current very large scale integration fabrication lines
Keywords :
MOSFET; hafnium compounds; hole mobility; ion implantation; iridium compounds; lanthanum compounds; leakage currents; rapid thermal annealing; work function; 1 V; 1.6 nm; 1000 C; 5.08 eV; Ir3Si-HfLaON; flat-band voltage; high work function; high-temperature stable MOSFET; leakage current; rapid thermal annealing; self-aligned ion implant; very large scale integration fabrication; Amorphous materials; Doping; Hafnium compounds; Leakage current; MOSFET circuits; Plasma devices; Plasma immersion ion implantation; Rapid thermal annealing; Rapid thermal processing; Voltage; $hbox{Ir}_{3}hbox{Si}$ ; HfLaON; MOSFET; work function;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.892367
