Modeling of the intrinsic retention characteristics of FLOTOX EEPROM cells under elevated temperature conditions

Author

Papadas, Constantin ; Pananakakis, George ; Ghibaudo, Gérard ; Riva, Carlo ; Pio, Federico ; Ghezzi, Paolo

Author_Institution

Central R&D, SGS-Thomson Microelectron., Crolles, France

Volume

42

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

678

Lastpage

682

Abstract

A model for the intrinsic retention characteristics of FLOTOX EEPROM cells is presented, which is based on the temperature dependence of the Fowler-Nordheim emission current. This model which has been successfully tested on single-poly-FLOTOX EEPROM cells, enables the device lifetime to be calculated for given memory operating conditions, instead of being extrapolated as is usually done. The sensitivity of the retention characteristics to several technological parameters is also investigated. It is expected that this intrinsic retention model (with minor modifications) will also be applicable to FLASH EEPROM cells

Keywords

EPROM; integrated circuit modelling; integrated circuit reliability; integrated memory circuits; reliability theory; FLOTOX EEPROM cells; Fowler-Nordheim emission current; IC modelling; device lifetime; elevated temperature conditions; flash EEPROM cells; intrinsic retention characteristics; memory operating conditions; reliability model; sensitivity; technological parameters; temperature dependence; Degradation; EPROM; Electrodes; Microelectronics; Research and development; Temperature dependence; Thermal stresses; Threshold voltage; Transient analysis; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.372071

Filename

372071