Title :
Visible wavelength Fabry-Perot reflection modulator using indirect-gap AlGaAs/AlAs
Author :
Pezeshki, B. ; Liu, Deming ; Lord, S.M. ; Harris, J.S.
Author_Institution :
Stanford Univ., CA, USA
fDate :
6/4/1992 12:00:00 AM
Abstract :
A Fabry-Perot reflection modulator with integrated quarter-wave mirrors using indirect bandgap AlGaAs/AlAs quantum wells as the cavity material is reported. A total reflectivity change of approximately 30% and insertion loss of 2.3 dB at a wavelength of 609 nm are achieved.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical modulation; semiconductor quantum wells; 2.3 dB; 609 nm; Fabry-Perot reflection modulator; cavity material; insertion loss; integrated quarter-wave mirrors; quantum wells; total reflectivity change;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920738
