Title :
Relaxation time approximation and mixing of hot and cold electron populations
Author :
Bordelon, T.J. ; Agostinelli, V.M. ; Wang, Xiu-Lin ; Maziar, C.M. ; Tasch, A.F.
Author_Institution :
Microelectron Res. Center, Texas Univ., Austin, TX, USA
fDate :
6/4/1992 12:00:00 AM
Abstract :
Relaxation time models found in most hydrodynamic device simulators fail in the presence of abruptly decreasing electric fields. Such fields are encountered at MOSFET drain junctions and lead to carrier distribution functions composed of two distinct populations: one hot and one cold. An approach which expresses features of both populations and produces more accurate simulation results is presented.
Keywords :
carrier relaxation time; hot carriers; insulated gate field effect transistors; semiconductor device models; MOSFET drain junctions; carrier distribution functions; cold electron populations; hot electron population; hydrodynamic device simulators; relaxation time models; simulation results;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920740
