Investigation into the properties of the explicit method for the resolution of the semiconductor device equations

Author

Pleumeekers, Jacco L. ; Simon, Claude M. ; Mottet, Serge

Author_Institution

France Telecom, CNET, Lannion, France

Volume

14

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

459

Lastpage

463

Abstract

Most simulators use a Newton-like method for solving the semiconductor device equations. The linearized system obtained by this method is then solved either directly or iteratively. However, it is also possible to use an explicit method instead of the implicit Newton method. This method was first introduced by Kurata and Nakamura (see ibid., vol. 11, no. 8, p. 1013-22, 1992) for the semiconductor equations. The authors revise and improve this explicit method and show the properties and limitations of the algorithm. The main limitation of the method is the long computation time needed. However, the method benefits from a very simple algorithm, low memory requirements, and highly parallel properties

Keywords

convergence of numerical methods; electronic engineering computing; iterative methods; parallel algorithms; semiconductor device models; simulation; algorithm; explicit method; highly parallel properties; low memory requirements; semiconductor device equations; simulators; Charge carrier processes; Current density; Differential equations; Newton method; Nonlinear equations; Poisson equations; Radiative recombination; Semiconductor devices; Steady-state; Telecommunications;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.372372

Filename

372372