GaN-Based Power Flip-Chip LEDs With SILAR and Hydrothermal ZnO Nanorods

Author

Shoou-Jinn Chang ; Nan-Ming Lin ; Shih-Chang Shei

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

21

Issue

4

fYear

2015

fDate

July-Aug. 2015

Firstpage

431

Lastpage

435

Abstract

In this paper, we present a simple and low-cost method combined successive ionic layer adsorption and reaction with Hydrothermal to form ZnO nanorods for GaN-based power flip-chip light-emitting diodes (LEDs). With 350-mA current injection, it was found that forward voltages were all 2.97 V when the 350-mA output powers were 361.7, 420.7, 426.8, 448.2, and 430.4 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. It was also found that the light output power of LED IV was 24% larger than that of LED I. Furthermore, it was also found that the formation of ZnO nanorods on the top of sapphire will not degrade the electrical properties.

Keywords

II-VI semiconductors; III-V semiconductors; adsorption; flip-chip devices; gallium compounds; light emitting diodes; nanofabrication; nanorods; wide band gap semiconductors; zinc compounds; GaN; GaN-based power flip-chip LED; SILAR; ZnO; current 350 mA; current injection; electrical properties; forward voltages; hydrothermal ZnO nanorods; light output power; light-emitting diodes; power 361.7 mW to 430.4 mW; sapphire; successive ionic layer adsorption and reaction; Educational institutions; Flip-chip devices; Gallium nitride; Light emitting diodes; Photonics; Power generation; Zinc oxide; GaN; LEDs; ZnO nanopillars; flip-chip; hydrothermal; successive ionic layer adsorption and reaction (SILAR);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2014.2377635

Filename

6975033