• DocumentCode
    753158
  • Title

    Electrical Properties of Trilayer Organic Light-Emitting Diodes With a Mixed Emitting Layer

  • Author

    Park, Jongwoon ; Park, Seounghwan ; Shin, Dongchan

  • Author_Institution
    Nat. Center for Nanoprocess & Equip., Korea Inst. of Ind. Technol. (KITECH), Gwangju, South Korea
  • Volume
    27
  • Issue
    13
  • fYear
    2009
  • fDate
    7/1/2009 12:00:00 AM
  • Firstpage
    2525
  • Lastpage
    2529
  • Abstract
    We investigate the electrical properties of three different trilayer organic light-emitting diodes (OLEDs), one of which is based on a conventional layered structure and the others on a blended structure where an emitting layer (EML) is uniformly or stepwise mixed with an electron transport layer (ETL), Tris-(8-hydroxyquinoline) aluminum ( Alq3). By way of simulations, we visualize the electrical behaviors that provide a clear understanding on why the uniformly mixed structure enhances further the longevity of OLEDs, compared to the other configurations. Namely, the uniformly mixed structure has the lowest concentration of positive charges in the ETL (thereby reducing oxidative degradation of Alq3) and weakest electric field (decreasing the probability of Joule heating), followed by the stepwise mixed one and then the layered one. However, such blended structures show lower recombination efficiency due to the delocalization of carriers (recombination), which has been demonstrated by simulations of the current balance.
  • Keywords
    organic light emitting diodes; organic semiconductors; conventional layered structure; electrical properties; electron transport layer; mixed emitting layer; recombination efficiency; trilayer organic light-emitting diodes; tris-(8-hydroxyquinoline) aluminum; Blended structure; current balance; organic light-emitting diodes (OLEDs); performance simulation;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2009.2014082
  • Filename
    4840465