Modulated Infrared Electroluminescence From Organic Light-Emitting Diodes

Author

Zang, Faxin ; Sum, Tze-Chien ; Zhu, Furong ; Hong, Zi-Ruo ; Sun, Xiaoyan ; Li, Wen Lian ; Huan, Cheng Hon Alfred

Author_Institution

Div. of Phys. & Appl. Phys., Nanyang Technol. Univ., Singapore

Volume

27

Issue

11

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

1522

Lastpage

1526

Abstract

Modulated infrared electroluminescence from organic light-emitting diodes (OLEDs) based on rare earth complexes (tris-dibenzoylmethanato-mono-bathophenanthroline) erbium or neodymium were fabricated. The modulations were realized by varying the device configuration and by varying an applied forward bias at room temperature. We found that the intensity of EL peak at 1.54 mum was reduced by a factor of almost 20 times as the Nd complex layer thickness in the OLEDs was increased from 1 nm to 5 nm. The intensity ratio of the 1.54 mum (Nd) to 1.06 mum (Er) decreases from 0.82 to 0.53 as the forward bias increases from 6.5 V to 18 V. The effects of the modulation of these IR emissions were also discussed.

Keywords

electroluminescence; erbium compounds; neodymium compounds; organic compounds; organic light emitting diodes; IR emissions; OLED; erbium; modulated infrared electroluminescence; neodymium; organic light-emitting diodes; rare earth complexes; temperature 293 K to 298 K; tris-dibenzoylmethanato-mono-bathophenanthroline; voltage 6.5 V to 18 V; Modulated infrared electroluminescence; organic light emitting devices; rare-earth complexes and recombination zone;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2009.2013872

Filename

4840475