Transient simulation of heterojunction photodiodes-part II: analysis of resonant cavity enhanced photodetectors

Author

Unlu, M.S. ; Onat, Bora M. ; Leblebici, Yusuf

Author_Institution

Dept. of Electr. Comput. & Syst. Eng., Boston Univ., MA, USA

Volume

13

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

406

Lastpage

415

Abstract

The high-speed response properties of resonant cavity enhanced (RCE) photodetectors have been investigated. The limitations on the high-speed performance of photodiodes and the advantages of RCE-detection are discussed. Transient response of heterojunction photodiodes under pulsed optical illumination has been simulated using the method described in Part I. Results on conventional AlGaAs/GaAs and RCE GaAs/InGaAs heterojunction p-i-n photodiodes are presented. For small area detectors, almost 50% bandwidth improvement along with a two-fold increase in efficiency is predicted for RCE devices over optimized conventional photodiodes. A nearly three-fold enhancement in the bandwidth-efficiency product was shown

Keywords

III-V semiconductors; gallium arsenide; optical resonators; p-i-n photodiodes; photodetectors; semiconductor heterojunctions; simulation; transient response; AlGaAs-GaAs; AlGaAs/GaAs; GaAs-InGaAs; GaAs/InGaAs heterojunction p-i-n photodiodes; RCE-detection; bandwidth-efficiency product; heterojunction photodiodes; high-speed performance; high-speed response properties; optimized conventional photodiodes; pulsed optical illumination; resonant cavity enhanced photodetectors; simulated; small area detectors; three-fold enhancement; transient response; transient simulation; Gallium arsenide; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Lighting; Optical pulses; Photodetectors; Photodiodes; Resonance; Transient response;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.372435

Filename

372435