DocumentCode
753432
Title
Optical bandwidth considerations in p-i-n multiple quantum-well modulators
Author
Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
13
Issue
3
fYear
1995
fDate
3/1/1995 12:00:00 AM
Firstpage
461
Lastpage
464
Abstract
We investigate the optical bandwidth of p-i(multiple quantum well [MQW])-n modulators employing various MQW designs. The optical bandwidth translates directly into an operating temperature range due to the shift of the band gap with temperature. We find that although greater maximum modulation may be obtained with narrow (~90 Å) quantum wells operating below the band edge (absorption increases with field), uniform large performance may be obtained over a larger bandwidth using wider (~110 Å) quantum wells operating at the exciton (absorption decreases with field). We obtain a usable bandwidth of 7.7 nm, which translates into a operating temperature range of 27°C
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; energy gap; excitons; gallium arsenide; integrated optics; optical interconnections; semiconductor quantum wells; 110 A; 27 C; 90 A; GaAs-AlGaAs; GaAs-AlGaAs QW modulators; MQW designs; band edge; band gap shift; exciton; operating temperature range; optical bandwidth; optical bandwidth considerations; p-i-n multiple quantum-well modulators; Absorption; Bandwidth; Excitons; Gallium arsenide; High speed optical techniques; Optical modulation; Optical superlattices; PIN photodiodes; Quantum well devices; Temperature distribution;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.372443
Filename
372443
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