• DocumentCode
    753432
  • Title

    Optical bandwidth considerations in p-i-n multiple quantum-well modulators

  • Author

    Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    13
  • Issue
    3
  • fYear
    1995
  • fDate
    3/1/1995 12:00:00 AM
  • Firstpage
    461
  • Lastpage
    464
  • Abstract
    We investigate the optical bandwidth of p-i(multiple quantum well [MQW])-n modulators employing various MQW designs. The optical bandwidth translates directly into an operating temperature range due to the shift of the band gap with temperature. We find that although greater maximum modulation may be obtained with narrow (~90 Å) quantum wells operating below the band edge (absorption increases with field), uniform large performance may be obtained over a larger bandwidth using wider (~110 Å) quantum wells operating at the exciton (absorption decreases with field). We obtain a usable bandwidth of 7.7 nm, which translates into a operating temperature range of 27°C
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical modulation; energy gap; excitons; gallium arsenide; integrated optics; optical interconnections; semiconductor quantum wells; 110 A; 27 C; 90 A; GaAs-AlGaAs; GaAs-AlGaAs QW modulators; MQW designs; band edge; band gap shift; exciton; operating temperature range; optical bandwidth; optical bandwidth considerations; p-i-n multiple quantum-well modulators; Absorption; Bandwidth; Excitons; Gallium arsenide; High speed optical techniques; Optical modulation; Optical superlattices; PIN photodiodes; Quantum well devices; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/50.372443
  • Filename
    372443