A method to determine the above-threshold stability of distributed feedback semiconductor laser diodes

Author

Lo, S.K.B. ; Ghafouri-Shiraz, H.

Author_Institution

Sch. of Electron. & Electr. Eng., Birmingham Univ., UK

Volume

13

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

563

Lastpage

568

Abstract

An analysis of the above-threshold stability of distributed feedback (DFB) semiconductor laser diodes (LD´s) is presented. It is based on a numerical model which takes into account effects of spatial hole burning (SHB) and the nonlinear gain coefficient. In the analysis, the Newton-Raphson (NR) technique has not been used, and no functional derivative is required. Taking into account the presence of another nonlasing mode, the single-mode stability of the DFB laser diodes is determined. The proposed model does not depend on any particular DFB structure, and hence can be applied to various DFB LD structures. Numerical results are presented for a three-phase-shift (3PS) DFB LD

Keywords

Newton-Raphson method; distributed feedback lasers; laser feedback; laser stability; laser theory; nonlinear optics; optical hole burning; semiconductor device models; semiconductor lasers; DFB LD structures; DFB laser diodes; DFB semiconductor laser diodes; Newton-Raphson technique; above-threshold stability; distributed feedback semiconductor laser diodes; functional derivative; nonlasing mode; nonlinear gain coefficient; numerical model; single-mode stability; spatial hole burning; three-phase-shift DFB LD; Charge carrier density; Diode lasers; Distributed feedback devices; Laser feedback; Laser modes; Laser stability; Laser theory; Numerical models; Semiconductor lasers; Stability analysis;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.372466

Filename

372466