DocumentCode :
753738
Title :
A CMOS Direct Injection-Locked Frequency Divider With High Division Ratios
Author :
Sim, Sanghoon ; Kim, Dong-Wook ; Hong, Songcheol
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
Volume :
19
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
314
Lastpage :
316
Abstract :
A CMOS injection-locked frequency divider (ILFD) with high division ratios and high frequency operation is presented. It consists of a ring oscillator and injection capacitors. An input signal is directly injected through the capacitors into the feedback nodes of the ring oscillator. The proposed ILFD is fabricated in a 0.18 mum CMOS process and has a chip core size of 68 mum times 70 mum. It shows multiple division ratios of 3, 6, and 9. The operation frequency is from 2.2 to 30.95 GHz. At the maximum operation frequency, the ILFD has a locking range of 260 MHz with an input power of less than 0.25 dBm, a division ratio of 9, and a power consumption of 12.5 mW. The locking range increases up to 3.2 GHz as the division ratio and the operation frequency decrease.
Keywords :
CMOS integrated circuits; frequency dividers; oscillators; CMOS injection-locked frequency divider; frequency 2.2 GHz to 30.95 GHz; frequency 260 MHz; high division ratios; injection capacitors; power 12.5 mW; ring oscillator; size 0.18 mum; CMOS; direct injection; frequency divider (FD); high division ratio; high frequency;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2009.2017603
Filename :
4840521
Link To Document :
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