The measurement and prediction of proton upset

Author

Shimano, Y. ; Goka, T. ; Kuboyama, S. ; Kawachi, K. ; Kanai, T. ; Takami, Y.

Author_Institution

Tsukuba Space Center, Japan

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2344

Lastpage

2348

Abstract

The authors evaluate tolerance to proton upset for three kinds of memories and one microprocessor unit for space use by irradiating them with high-energy protons up to nearly 70 MeV. They predict the error rates of these memories using a modified semi-empirical equation of W.L. Bendel and E.L. Petersen (1983). A two-parameter method was used instead of Bendel´s one-parameter method. There is a large difference between these two methods with regard to the fitted parameters. The calculation of upset rates in orbits were carried out using these parameters and NASA AP8MAC, AP8MIC. For the 93419 RAM the result of this calculation was compared with the in-orbit data taken on the MOS-1 spacecraft. A good agreement was found between the two sets of upset-rate data

Keywords

aerospace instrumentation; environmental testing; integrated circuit testing; integrated memory circuits; microprocessor chips; proton effects; radiation hardening (electronics); random-access storage; 70 MeV; 93419 RAM; AP8MAC; AP8MIC; MOS-1 spacecraft; high-energy protons; in-orbit data; microprocessor unit; prediction of proton upset; semi-empirical equation; space use; tolerance to proton upset; two-parameter method; upset rates; upset-rate data; Acceleration; Atomic measurements; Cyclotrons; Degradation; Equations; Error analysis; Particle beams; Protons; Random access memory; Space vehicles;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45446

Filename

45446