• DocumentCode
    754165
  • Title

    Suppressing phosphorus diffusion in germanium by carbon incorporation

  • Author

    Luo, G. ; Cheng, C.C. ; Huang, C.-Y. ; Hsu, S.-L. ; Chien, C.H. ; Ni, W.X. ; Chang, C.Y.

  • Author_Institution
    Nat. Nano Device Labs., Taiwan, Taiwan
  • Volume
    41
  • Issue
    24
  • fYear
    2005
  • Firstpage
    1354
  • Lastpage
    1355
  • Abstract
    A problem in the Ge MOSFET process is that the phosphorus for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
  • Keywords
    MOSFET; annealing; carbon; elemental semiconductors; germanium; p-n junctions; phosphorus; semiconductor doping; Ge MOSFET process; Ge:P; annealing; carbon incorporation; phosphorus diffusion suppression;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20052999
  • Filename
    1550133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=754165