• DocumentCode
    754253
  • Title

    Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy

  • Author

    Dashiell, M.W. ; Kolodzey, J. ; Crozat, P. ; Aniel, F. ; Lourtioz, J.M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Delaware Univ., Newark, DE, USA
  • Volume
    23
  • Issue
    6
  • fYear
    2002
  • fDate
    6/1/2002 12:00:00 AM
  • Firstpage
    357
  • Lastpage
    359
  • Abstract
    The bias dependence of the single-port microwave reflection gain of 15 μm-diameter Si Esaki tunnel diodes, grown by molecular beam epitaxy, was studied as a function of frequency. A simple equivalent circuit accurately modeled the data and yielded the forward-bias junction capacitance, which cannot be obtained by conventional low frequency capacitance-voltage techniques. The diodes were highly-doped step p-i-n junctions and exhibited a peak current density of 16 kA/cm2. The microwave reflection gain and cut-off frequency were 12 dB land 1.6 GHz, respectively, with a speed index (slew rate) of 7.1 V/ns.
  • Keywords
    capacitance; elemental semiconductors; equivalent circuits; heavily doped semiconductors; microwave diodes; molecular beam epitaxial growth; p-i-n diodes; semiconductor device measurement; semiconductor device models; semiconductor growth; silicon; tunnel diodes; 1.6 GHz; 12 dB; 15 micron; Si; Si Esaki tunnel diodes; bias dependence; equivalent circuit; forward-bias junction capacitance; highly-doped step p-i-n junction diodes; low frequency capacitance-voltage techniques; microwave cut-off frequency; microwave measurements; microwave properties; microwave reflection gain; molecular beam epitaxy; peak current density; silicon junction tunnel diodes; single-port microwave reflection gain; slew rate; speed index; Capacitance; Capacitance-voltage characteristics; Equivalent circuits; Frequency; Molecular beam epitaxial growth; Optical reflection; P-i-n diodes; PIN photodiodes; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2002.1004234
  • Filename
    1004234