• DocumentCode
    75446
  • Title

    Fabrication, Novel Morphology, and Field Emission Properties of \\hbox {Ga}_{2}\\hbox {O}_{3}/\\hbox {In}_{2}\\hbox {O}_{3} Core-Shell Nanowires

  • Author

    Hsu, Cheng-Liang ; Liu, Shin ; Tsai, Tsung-Ying ; Chen, Kuan-Chao

  • Author_Institution
    Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
  • Volume
    34
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    96
  • Lastpage
    98
  • Abstract
    Ga2O3/In2O3 core-shell nanowires (NWs) have a structure in which quadrangular In2O3 nanoflakes surround Ga2O3 NWs. The XRD peak of Ga2O3/In2 O3 core-shell NWs shifts to a higher angle as Ga3+ impurity, which has a smaller radius than In3+, is added. Photoluminescence observations reveal that In2O3 red emission was shifted to infrared by Ga doping. The low-threshold electric field of Ga2O3/In2 O3 core-shell NWs is only 1.9 V/μm, which is enhanced by the nanoscale quadrangular flake morphology.
  • Keywords
    X-ray diffraction; crystal morphology; field emission; gallium compounds; indium compounds; nanowires; photoluminescence; sputtered coatings; Ga2O3-In2O3; XRD; core-shell nanowire fabrication; core-shell nanowire morphology; field emission properties; nanoscale quadrangular flake morphology; photoluminescence; quadrangular nanoflakes; red emission; Doping; Gold; Impurities; Indium; Nanoscale devices; Nanowires; X-ray scattering; $hbox{Ga}_{2}hbox{O}_{3}$; $hbox{In}_{2}hbox{O}_{3}$; Core shell; filed electron emission; nanowires (NWs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2222339
  • Filename
    6361355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=75446