Low threshold current density operation of GaInP-AlGaInP visible multiple quantum wire-like lasers (MQWR-LDs) under the room temperature pulsed condition

Author

Yoshida, Junji ; Kishino, Katsumi

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan

Volume

7

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

241

Lastpage

243

Abstract

GaInP-AlGaInP multiple quantum wire-like layers were fabricated by the in situ strain induced lateral layer ordering process during MBE growth. According to TEM images, the quantum wire size was around 10 nm and quantum wire axis was along [011~] direction. When we made laser diodes with stripes along [011] direction, the low threshold current density, of 315 A/cm/sup 2/ was obtained. Anisotropic lasing characteristics between [011] and [011~] directions, in threshold current density, lasing mode, and lasing wavelength were observed.<>

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser modes; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; semiconductor quantum wires; transmission electron microscopy; GaInP-AlGaInP; GaInP-AlGaInP visible multiple quantum wire-like lasers; MBE growth; TEM images; [011] direction; [011~] direction; anisotropic lasing characteristics; in situ strain induced lateral layer ordering process; laser diodes; lasing mode; lasing wavelength; low threshold current density; low threshold current density operation; quantum wire axis; quantum wire size; room temperature pulsed condition; threshold current density; Anisotropic magnetoresistance; Capacitive sensors; Laser modes; Molecular beam epitaxial growth; Optical films; Optical superlattices; Quantum well devices; Temperature; Threshold current; Wire;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.372733

Filename

372733