Theoretical analysis of temperature sensitivity of differential gain in 1.55-μm InGaAsP-InP quantum-well lasers

Author

Seki, S. ; Yokoyama, K.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

7

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

251

Lastpage

253

Abstract

We study the temperature sensitivity of the differential gain in InGaAsP-InP strained-layer (SL) quantum-well (QW) lasers operating at a wavelength of 1.55 μm. Electrostatic deformation in conduction-band and valence-band profiles is taken into account by solving Poisson´s equation and the effective-mass equations for conduction and valence bands in a self-consistent manner. We demonstrate that electrostatic deformation in both band profiles plays a significant role in determining the temperature sensitivity of the differential gain in 1.55-μm InGaAsP-InP SL QW lasers. The physical mechanism for limiting the differential gain at elevated temperatures is also discussed.

Keywords

III-V semiconductors; conduction bands; electrostatics; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser theory; quantum well lasers; sensitivity; valence bands; 1.55 mum; 1.55-/spl mu/m InGaAsP-InP quantum-well lasers; InGaAsP-InP; Poisson´s equation; SL QW lasers; band profiles; conduction-band; differential gain; effective-mass equations; electrostatic deformation; physical mechanism; self-consistent manner; strained-layer quantum-well lasers; temperature sensitivity; theoretical analysis; valence bands; valence-band profiles; Capacitive sensors; Electrostatics; Laser modes; Laser theory; Poisson equations; Quantum well lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.372736

Filename

372736