High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm

Author

Choi, H.K. ; Turner, G.W. ; Connors, M.K. ; Fox, S. ; Dauga, C. ; Dagenais, M.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

7

Issue

3

fYear

1995

fDate

3/1/1995 12:00:00 AM

Firstpage

281

Lastpage

283

Abstract

Ridge-waveguide lasers emitting at /spl sim/1.9 μm have been fabricated from a multiple-quantum-well heterostructure with an active region consisting of five GaInAsSb wells and six AlGaAsSb barriers. At room temperature, single-ended cw output power as high as 100 mW has been obtained. The maximum cw operating temperature is 130/spl deg/C, with a characteristic temperature of 85 K between 20 and 80/spl deg/C.

Keywords

Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; quantum well lasers; waveguide lasers; 1.9 mum; 100 mW; 130 C; 20 to 80 C; 85 K; AlGaAsSb barriers; GaInAsSb wells; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb ridge-waveguide lasers; active region; characteristic temperature; high-power; high-temperature operation; maximum cw operating temperature; multiple-quantum-well heterostructure; room temperature; single-ended cw output power; Capacitive sensors; Gas lasers; Optical materials; Power generation; Pump lasers; Quantum well lasers; Substrates; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.372746

Filename

372746