Effect of p-i-p⁺ buffer on characteristics of n-channel heterostructure field-effect transistors

Author

Kanamori, Mikio ; Jensen, Geir U. ; Shur, Michael ; Lee, Kwyro

Author_Institution

Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA

Volume

39

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

226

Lastpage

233

Abstract

The carrier concentration in heterostructure FETs (HFETs) with a p-i-p⁺ buffer is presented as a function of the gate bias, obtained by self-consistent one-dimensional calculation of 2-D electron density, subband levels, and electrostatic potential. These results quantify certain limitations on the range of geometrical and doping parameters and make it possible to optimize the HFET design and to compare modulation doped FET (MODFET) and doped channel HFET (DCHFET) structures. Monte Carlo simulations demonstrate that this p-i-p⁺ buffer drastically reduces the short-channel effects

Keywords

Monte Carlo methods; field effect transistors; high electron mobility transistors; semiconductor device models; 2-D electron density; DCHFET; HFET; MODFET; Monte Carlo simulations; carrier concentration; characteristics; doped channel HFET; doping parameters; electrostatic potential; gate bias; geometrical parameters; heterostructure field-effect transistors; n-channel FETs; one-dimensional calculation; p-i-p⁺ buffer; short channel effects reduction; subband levels; Doping; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; National electric code; Supercomputers; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.121677

Filename

121677

Effect of p-i-p+ buffer on characteristics of n-channel heterostructure field-effect transistors

Kanamori, Mikio ; Jensen, Geir U. ; Shur, Michael ; Lee, Kwyro

jour

Effect of p-i-p⁺ buffer on characteristics of n-channel heterostructure field-effect transistors