Numerical analysis of the looping effect in GaAs MESFET´s

Author

Lo, Shih-Hsien ; Lee, Chien-Ping

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan

Volume

39

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

242

Lastpage

249

Abstract

The looping effect in the I_D-V_D (drain-current-drain-voltage) characteristics of GaAs MESFETs on semi-insulating substrates has been studied using a two-dimensional numerical analysis. Both the transient and the steady-state behaviors of the looping phenomenon were simulated. Peak voltage- and frequency-dependent behaviors of the looping effect are analyzed. The I_D-V_D loop is due to the difference in the distribution of ionized EL2 concentration when the drain voltage rises and falls because of the trapping process of EL2s. The output conductance is also found to be frequency-dependent and is explained by the frequency-dependent modulation of the potential barrier height at the channel/substrate interface due to the drain-voltage variation

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; EL2 concentration; GaAs; MESFETs; channel/substrate interface; drain current hysteresis; drain-voltage variation; frequency-dependent behaviors; frequency-dependent modulation; looping effect; models; output conductance; peak voltage dependent behavior; potential barrier height; semi-insulating substrates; semiconductors; two-dimensional numerical analysis; Electron emission; Electron mobility; Electron traps; Frequency; Gallium arsenide; MESFETs; Numerical analysis; Radioactive decay; Steady-state; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.121679

Filename

121679