Computer simulation studies of ion implantation in crystalline silicon

Author

Murthy, Cheruvu S. ; Srinivasan, G.R.

Author_Institution

IBM East Fishkill Lab., Hopewell Junction, NY, USA

Volume

39

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

264

Lastpage

274

Abstract

Results from systematic computer simulation studies of boron, phosphorus, and arsenic implants into silicon that are important to integrated circuit technology are discussed in terms of interatomic potential, electronic energy loss, and target orientation effects. Detailed crystallographic analyses of axial and planar channeling are presented. The time evolution of an interesting collision cascade which depicts accidental channeling and dechanneling for a 5-keV boron implant is also presented. An examination of the binary collision cascade code MARLOWE is made and applied to simulate hyperchanneling of high-energy alpha particles in silicon

Keywords

alpha-particle effects; arsenic; boron; channelling; electronic engineering computing; elemental semiconductors; ion implantation; phosphorus; silicon; MARLOWE; Si:As; Si:B; Si:P; axial channelling; binary collision cascade code; collision cascade time evolution; computer simulation studies; crystalline Si; dechanneling; electronic energy loss; high-energy alpha particles; hyperchanneling; interatomic potential; ion implantation; planar channeling; target orientation effects; Boron; Computer simulation; Crystallization; Crystallography; Energy loss; Implants; Integrated circuit technology; Ion implantation; Potential energy; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.121682

Filename

121682