Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates

Author

Limb, J.B. ; Yoo, D. ; Ryou, J.-H. ; Shen, S.C. ; Dupuis, R.D.

Author_Institution

Center for Compound Semicond., Georgia Inst. of Technol., Sch. Of Electr. And Comput. Eng., GA

Volume

43

Issue

6

fYear

2007

Firstpage

67

Lastpage

68

Abstract

Low on-resistance gallium nitride pin rectifiers grown by metal organic chemical vapour deposition on n-type 6H-SiC substrates are reported. The diode structures consist of an n⁺-GaN layer grown on the substrate, followed by a 2.5 mum unintentionally doped i-GaN layer, and a p-type GaN layer capped with a p⁺⁺-GaN contact layer. The mesa-structure pin diodes exhibited a blocking voltage as large as V_r ~-500 V, at a reverse current density of I_r ~1 A/cm². The on-resistance is 2.3 mOmega middot cm² for an 80 mum mesa diameter circular device. This yields a power figure of merit value of 108.69 MW/cm². The on-resistance and the figure of merit values are believed to be the best reported for vertical mesa-geometry GaN pin rectifiers grown on 6H-SiC substrates with comparable i-layer thickness

Keywords

III-V semiconductors; MOCVD; gallium compounds; p-i-n diodes; semiconductor growth; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 2.5 micron; 6H-SiC substrates; 80 micron; GaN; GaN pin rectifiers; diode structures; gallium nitride pin rectifiers; mesa-structure pin diodes; metal organic chemical vapour deposition; n⁺-GaN layer; p-type GaN layer; p⁺⁺-GaN contact layer; reverse current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20070065

Filename

4138097