A novel all-optical bistable device in a noninterferometric double p-i(ESQW´s)-n diode structure

Author

Kwon, O.K. ; Kim, K. ; Hyun, K.S. ; Choi, Y.W. ; Lee, E.H. ; Mei, X.B. ; Tu, C.W.

Author_Institution

Electron. & Telecommun. Res. Inst., Taejeon, South Korea

Volume

8

Issue

2

fYear

1996

Firstpage

224

Lastpage

226

Abstract

A novel all-optical bistable double p-i-n structure (p-i-n-i-p) is demonstrated. Two thin intrinsic regions made of extremely shallow quantum wells (ESQWs) allow both large electric field modulation and strong light absorption, enhancing the optical bistability. Due to the noninterferometric nature, the double p-i(ESQWs)-n structure is not sensitive to thickness fluctuation, unlike the previously reported all-optical bistable device of asymmetric Fabry-Perot cavity structure. Uniform and high performance is realized with a contrast ratio of /spl sim/2.1, a reflectivity change of /spl sim/24%, and a bistable loop width of /spl sim/75% at 1 mW optical power without external bias.

Keywords

electro-optical modulation; electro-optical switches; integrated optics; optical bistability; reflectivity; semiconductor quantum wells; 1 mW; all-optical bistable device; asymmetric Fabry-Perot cavity structure; bistable loop width; contrast ratio; double p-i-n structure; external bias; extremely shallow quantum wells; high performance; large electric field modulation; noninterferometric double p-i(ESQW´s)-n diode structure; noninterferometric nature; optical bistability; optical power; reflectivity change; strong light absorption; thickness fluctuation; thin intrinsic regions; Absorption; Fabry-Perot; Fluctuations; Optical bistability; Optical modulation; Optical sensors; P-i-n diodes; PIN photodiodes; Reflectivity; Ultraviolet sources;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.484248

Filename

484248