A nonrecessed-base, self-aligned bipolar structure with selectively deposited polysilicon emitter

Author

Sun, S.W. ; Denning, Dean ; Hayden, James D. ; Woo, Michael ; Fitch, Jon T. ; Kaushik, Vidya

Author_Institution

Motorola Inc., Austin, TX, USA

Volume

39

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

1711

Lastpage

1716

Abstract

A self-aligned bipolar structure, which features a nonrecessed base and a selectively deposited polysilicon emitter, is proposed. The in situ surface cleaning process prior to the selective-polysilicon deposition minimizes the residual native oxide in the emitter window. Both high-quality selective-polysilicon film and well-behaved submicrometer bipolar device characteristics have been obtained for bipolar or BiCMOS VLSI applications. The effects of the nonrecessed-base device structure on the bipolar device parameter distribution and bipolar hot-carrier immunity are also discussed

Keywords

BIMOS integrated circuits; VLSI; bipolar integrated circuits; integrated circuit technology; surface treatment; BiCMOS VLSI applications; bipolar VLSI; bipolar device parameter distribution; bipolar hot-carrier immunity; in situ surface cleaning process; nonrecessed base; residual native oxide; selectively deposited polysilicon emitter; self-aligned bipolar structure; submicrometer bipolar device characteristics; BiCMOS integrated circuits; Etching; Hafnium; Hot carriers; Hydrogen; Process control; Silicon; Substrates; Sun; Surface cleaning;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.141238

Filename

141238