Title :
Simple equations for the electrostatic potential in buried-channel MOS devices
Author :
Yin, Yiwen ; Cooper, James A., Jr.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
Simple equations are presented for the potential in a buried-channel MOS device as a function of channel charge. If either the oxide thickness or the channel charge is reduced to zero, these equations simplify to the equations obtained by others. The predictions of these equations are compared to numerical solutions, and good agreement is found
Keywords :
electrostatics; metal-insulator-semiconductor devices; semiconductor device models; buried-channel MOS devices; channel charge; electrostatic potential; oxide thickness; Avalanche breakdown; Electric breakdown; Electron devices; Electrostatics; Equations; Erbium; MOS devices; Semiconductor diodes; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
