Modeling alpha-particle-induced accelerated soft error rate in semiconductor memory

Author

Gong, Myeong Kook ; Kim, Do Woo ; Lee, Chang Yeol ; Choi, Deuk Sung ; Kang, Dae-Gwan

Author_Institution

Memory R&D Div., Hynix Semicond. Inc., Ichon, South Korea

Volume

50

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

1652

Lastpage

1657

Abstract

This paper presents an analytic integral model for the accelerated soft error rate (ASER). The model took into account the physical and structural parameters as four alpha incident angles and an angular function. Two angles were related to charge collection and another two angles and an angular function were related to measurement configuration and how much alpha flux arrived. The model was verified by measuring ASER in 8 M static RAM. The model could explain ASER characteristics of saturation, exponential dependence, and vanishing with the power supply voltage. The model also reproduced an extraordinary phenomenon that there is a maximum in ASER with respect to the thickness of the capping layer on the static RAM.

Keywords

SRAM chips; alpha-particle effects; errors; integrated circuit modelling; 8 Mbit; accelerated soft error rate; alpha-particle irradiation; analytic integral model; angular function; capping layer; charge collection; semiconductor memory; static RAM; Acceleration; Alpha particles; Charge carrier processes; Current measurement; Electron mobility; Error analysis; Read-write memory; Semiconductor device measurement; Semiconductor memory; Structural engineering;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.813905

Filename

1217250