Advanced Amorphous Silicon Thin-Film Transistors for AM-OLEDs: Electrical Performance and Stability

Author

Kuo, Alex ; Won, Tae Kyung ; Kanicki, Jerzy

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI

Volume

55

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1621

Lastpage

1629

Abstract

We fabricated and characterized the advanced amorphous silicon thin-film transistors with a bilayer structure for both the active and gate dielectric films. The electrical field across the gate insulator has a significant influence on the device threshold voltage electrical stability. We show that high thin-film transistor stability can be achieved even under the presence of a high channel current. Its electrical and high-temperature stability improves up to a factor of five when the TFT biasing condition changes from the linear to the saturation region of operation.

Keywords

LED displays; amorphous semiconductors; dielectric thin films; elemental semiconductors; hydrogen; semiconductor thin films; silicon; stability; thin film transistors; Si:H; active dielectric films; active-matrix organic light emitting displays; advanced amorphous silicon thin-film transistors; bilayer structure; channel current; electrical stability; gate dielectric films; gate insulator; high-temperature stability; threshold voltage; Amorphous silicon; Conductive films; Insulation; Liquid crystal displays; Production; Stability; Temperature; Thin film transistors; Threshold voltage; Throughput; Advanced amorphous silicon thin-film transistor (a-Si:H TFT); bias temperature stress (BTS); biasing condition; circuit stability; current temperature stress (CTS);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.924047

Filename

4545039