A Compact Model of Phase-Change Memory Based on Rate Equations of Crystallization and Amorphization

Author

Sonoda, Ken´ichiro ; Sakai, Atsushi ; Moniwa, Masahiro ; Ishikawa, Kiyoshi ; Tsuchiya, Osamu ; Inoue, Yasuo

Author_Institution

Adv. Device Dev. Dept., Renesas Technol. Corp., Itami

Volume

55

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1672

Lastpage

1681

Abstract

In this paper, a compact model of phase-change memory based on the rate equations of crystallization and amorphization will be presented and confirmed by measurement. The model reproduces the nonlinear current-voltage behavior of both the "set" and "reset" states. Temperatures in the phase-change layer are calculated by a thermal equivalent circuit. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between the "set" and "reset" states. The crystallization rate is calculated based on the nucleation-growth model. The heat of fusion (the latent heat) is taken into account in the calculation of the amorphization rate.

Keywords

amorphisation; crystallisation; equivalent circuits; heat of fusion; nucleation; phase change materials; amorphization; crystallization; crystallization rate; heat of fusion; latent heat; nonlinear current-voltage behavior; nucleation growth; phase change memory; phase-change layer; rate equations; thermal equivalent circuit; Amorphous materials; Crystallization; Electric resistance; Equivalent circuits; Nonlinear equations; Phase change memory; Resistance heating; Switches; Temperature dependence; Temperature distribution; Amorphous semiconductors; crystal growth; phase transformers; resistance heating; semiconductor-device modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.923740

Filename

4545054