4H-SiC normally-off vertical junction field-effect transistor with high current density

Author

Tone, K. ; Zhao, J.H. ; Fursin, L. ; Alexandrov, P. ; Weiner, M.

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New Jersey, Piscataway, NJ, USA

Volume

24

Issue

7

fYear

2003

fDate

7/1/2003 12:00:00 AM

Firstpage

463

Lastpage

465

Abstract

4H-silicon carbide (SiC) normally-off vertical junction field-effect transistor (JFET) is developed in a purely vertical configuration without internal lateral JFET gates. The 2.1-μm vertical p/sup +/n junction gates are created on the side walls of deep trenches by tilted aluminum (Al) implantation. Normally-off operation with blocking voltage V/sub bl/ of 1 726 V is demonstrated with an on-state current density of 300 A/cm² at a drain voltage of 3 V. The low specific on-resistance R/sub on-sp/ of 3.6 m/spl Omega/cm² gives the V/sub bl/²/R/sub on-sp/ value of 830 MW/cm², surpassing the past records of both unipolar and bipolar 4H-SiC power switches.

Keywords

current density; junction gate field effect transistors; silicon compounds; wide band gap semiconductors; 1726 V; 2.1 micron; 3 V; SiC; blocking voltage; deep trenches; drain voltage; normally-off vertical junction field-effect transistor; on-state current density; p/sup +/n junction gates; side walls; Aluminum; Current density; FETs; MOSFET circuits; Photonic band gap; Polyimides; Power electronics; Silicon carbide; Switches; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.815000

Filename

1217298