DocumentCode
756807
Title
N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films
Author
Kiong Lee, Kin ; Ishida, Yuuki ; Ohshima, Takeshi ; Kojima, Kazutoshi ; Tanaka, Yasunori ; Takahashi, Tetsuo ; Okumura, Hajime ; Arai, Kazuo ; Kamiya, Tomihiro
Author_Institution
Japan Atomic Energy Res. Inst., Gunma, Japan
Volume
24
Issue
7
fYear
2003
fDate
7/1/2003 12:00:00 AM
Firstpage
466
Lastpage
468
Abstract
We present results of the enhancement mode, n-channel 3C-silicon carbide (SiC) MOSFETs fabricated on homoepitaxy 3C-SiC films. The fabricated devices exhibit excellent gate-controlled linear and saturation regimes of operation. The average effective channel mobility is found to be 229 cm/sup 2//Vs. The breakdown field of the gate oxide is observed at be 11 MV/cm and the subthreshold swing is determined to be 280 mV/decade.
Keywords
MOSFET; carrier mobility; electron traps; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; N-channel MOSFETs; SiC; breakdown field; effective channel mobility; enhancement mode; gate-controlled linear regimes; homoepitaxy-grown 3C-SiC films; interface traps; saturation regimes; subthreshold swing; Annealing; Electric breakdown; Inductors; Ion implantation; MOSFETs; Oxidation; Semiconductor films; Silicon carbide; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2003.815006
Filename
1217299
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