DocumentCode
757375
Title
Luminescence Properties and Morphology of ZnSe:Te Films
Author
Gaysinskiy, Valeriy ; Singh, Bipin ; Ovechkina, Lena ; Miller, Stuart ; Thacker, Samta ; Nagarkar, Vivek
Author_Institution
Radiat. Monitoring Devices (RMD), Inc., Watertown, MA
Volume
55
Issue
3
fYear
2008
fDate
6/1/2008 12:00:00 AM
Firstpage
1556
Lastpage
1560
Abstract
High-speed imaging applications, such as time-resolved X-ray diffraction, require detectors with high frame rates ranging from hundreds to thousands of frames per second. New high-resolution CCD imagers capable of operating at the required frame rates have been developed; however, the current X-ray to light converters are the performance limiting factor in such applications. Here we report on the development of a structured ZnSe:Te scintillator that promises to provide extraordinarily high scintillation efficiency, emission at 640 nm (ideally suited for CCD sensors), high density of 5.4 g/cm3, and a fast decay time of ~3 mus to ~50 mus with no afterglow, which permits high speed imaging without the problem of ghosting due to persistence. Furthermore, the non-hygroscopic and non-toxic nature of the ZnSe:Te scintillator, along with its stability of response over a wide range of temperatures and extremely high levels of radiation, makes it an ideal material for radiation detection in general and for synchrotron applications in particular. At RMD, we have fabricated microcolumnar ZnSe:Te films measuring ~25 mum to 85 mum in thickness using co-evaporation of ZnSe and ZnTe on suitable substrates. These films show columnar structure with columns ranging from 0.2 mum to 5 mum in diameter. The scintillation light produced by the radiation interaction is channeled within the microcolumns by the mechanism of total internal reflection, thereby providing very high spatial resolution, even when films are made thick to achieve high X-ray absorption.
Keywords
CCD image sensors; II-VI semiconductors; X-ray absorption; X-ray diffraction; channelling; luminescence; semiconductor growth; semiconductor thin films; solid scintillation detectors; time resolved spectra; vacuum deposition; wide band gap semiconductors; zinc compounds; RMD; X-ray absorption; ZnSe:Te; ZnTe; channelling; coevaporation; high-resolution CCD imagers; high-speed imaging applications; internal reflection; light converters; luminescence properties; microcolumnar ZnSe:Te film morphology; nonhygroscopic nature; nontoxic nature; performance limiting factor; radiation detection; scintillator; size 0.2 mum to 5 mum; size 25 mum to 85 mum; spatial resolution; synchrotron applications; time 3 mus to 50 mus; time-resolved X-ray diffraction; wavelength 640 nm; Charge coupled devices; High-resolution imaging; Luminescence; Morphology; Optical films; Optical imaging; X-ray detection; X-ray diffraction; X-ray imaging; Zinc compounds; Bright scintillator; high-speed imaging; low after glow scintillator; microcolumnar zinc selenide;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.924078
Filename
4545122
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