DocumentCode
757435
Title
Circular under-pad multiple-mode ESD protection structure for ICs
Author
Feng, H.G. ; Zhan, R.Y. ; Wu, Q. ; Chen, G. ; Wang, A.Z.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Volume
38
Issue
11
fYear
2002
fDate
5/23/2002 12:00:00 AM
Firstpage
511
Lastpage
513
Abstract
A novel circular pad-oriented low-parasitic all-mode electrostatic discharge (ESD) protection structure is designed in BiCMOS for RF and mixed-signal (MS) ICs, featuring tunable triggering, low voltage clamping (~2 V), low discharge impedance (~Ω) and low leakage current (~pA). It consumes limited silicon and achieves 14 kV ESD protection
Keywords
BiCMOS integrated circuits; electrostatic discharge; integrated circuit design; mixed analogue-digital integrated circuits; protection; 14 kV; BiCMOS; ESD protection; IC bonding pads; RF ICs; circular under-pad multiple-mode structure; electrostatic discharge protection; low discharge impedance; low leakage current; low voltage clamping; mixed-signal integrated circuits; pad-oriented low-parasitic all-mode structure; tunable triggering;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020356
Filename
1006789
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