DocumentCode
757461
Title
Investigations on turn-off effects in fast-recovery power diodes by modelling and simulation
Author
Winternheimer, S. ; Laska, B.
Author_Institution
Inst. fur Stromrichtertech., Tech. Hochschule Darmstadt, Germany
Volume
139
Issue
2
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
55
Lastpage
61
Abstract
A model describing the transient turn-off behaviour of a fast-recovery power diode is derived and implemented into a simulation program for analysis of electrical networks. The modelling is based on the physical processes in the low-doped middle region of the semiconductor device, using the charge control approach and approximating the excess charge distribution by sinusoidal curves. The transient behaviour of the model is verified by experimental measurements in a chopper circuit with a MOSFET as the switching element and a diode as the free-wheeling path
Keywords
choppers (circuits); semiconductor device models; semiconductor diodes; transients; MOSFET; charge control; chopper circuit; excess charge distribution; fast-recovery power diodes; low-doped middle region; semiconductor device; simulation program; transient turn-off behaviour;
fLanguage
English
Journal_Title
Electric Power Applications, IEE Proceedings B
Publisher
iet
ISSN
0143-7038
Type
jour
Filename
121767
Link To Document