Title :
Investigations on turn-off effects in fast-recovery power diodes by modelling and simulation
Author :
Winternheimer, S. ; Laska, B.
Author_Institution :
Inst. fur Stromrichtertech., Tech. Hochschule Darmstadt, Germany
fDate :
3/1/1992 12:00:00 AM
Abstract :
A model describing the transient turn-off behaviour of a fast-recovery power diode is derived and implemented into a simulation program for analysis of electrical networks. The modelling is based on the physical processes in the low-doped middle region of the semiconductor device, using the charge control approach and approximating the excess charge distribution by sinusoidal curves. The transient behaviour of the model is verified by experimental measurements in a chopper circuit with a MOSFET as the switching element and a diode as the free-wheeling path
Keywords :
choppers (circuits); semiconductor device models; semiconductor diodes; transients; MOSFET; charge control; chopper circuit; excess charge distribution; fast-recovery power diodes; low-doped middle region; semiconductor device; simulation program; transient turn-off behaviour;
Journal_Title :
Electric Power Applications, IEE Proceedings B
