A novel 0.1 μm MOSFET structure with inverted sidewall and recessed channel

Author

Jeongho Lyu ; Byung-Gook Park ; Chun, K. ; Jong Duk Lee

Author_Institution

Dept. of Electron. Eng., Seoul Nat. Univ., South Korea

Volume

17

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

157

Lastpage

159

Abstract

To solve the problems of trade-off between the short channel effect and the performance enhancement of sub-quartermicrometer MOSFETs, we have developed a recessed channel MOSFET structure called ISRC (Inverted-Sidewall Recessed-Channel). The oxide thickness is 4 nm and the effective channel length is 0.1 μm, which is the smallest Si-MOSFET ever reported in the recessed channel structures. The maximum saturation transconductance at V/sub D/=2 V is 446 mS/mm for the 0.1 μm n-channel device. The threshold voltage roll-off is kept within 64 mV when the gate length varies from 1.4 μm to 0.1 μm and good subthreshold characteristics are achieved for 0.1 μm channel device.

Keywords

MOSFET; capacitance; characteristics measurement; doping profiles; elemental semiconductors; semiconductor device reliability; semiconductor doping; silicon; 0.1 micron; 2 V; ISRC; MOSFET structure; Si; effective channel length; gate length; inverted sidewall; maximum saturation transconductance; oxide thickness; performance enhancement; recessed channel; subthreshold characteristics; threshold voltage roll-off; Doping; Etching; FETs; Lithography; MOSFET circuits; Oxidation; Space technology; Strips; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.485159

Filename

485159